Samsung Breaks the 10-Nanometer Barrier: DRAM Enters a New Era

Samsung has made a significant step in the evolution of DRAM memories: the South Korean company has reportedly created the first functional die based on a production process of less than 10 nanometers.

According to industry sources, who follow projections for late 2025, this result has been achieved in the development of the node referred to as "10a", which represents an evolution from the current generations 1x, 1y, 1z, and subsequent ones.

The new process, estimated between 9.5 and 9.7 nm, marks the breach of the symbolic threshold of 10 nm in DRAM production. The milestone has been reached thanks to the introduction of two main innovations: the cell structure named "4F Square" and the use of vertical channel transistors (VCT, Vertical Channel Transistor).

During the checks on the produced wafers, Samsung has identified a functional die, the first step towards optimizing production yields. The transition from the traditional 6F structure, with a rectangular arrangement (3F x 2F), to the new 4F configuration (2F x 2F) allows for a significant increase in cell density. Estimates indicate an improvement ranging from 30% to 50% per single chip, with benefits in both capacity and energy efficiency. More compact cells indeed allow for a reduction in consumption, a factor increasingly relevant in workloads related to artificial intelligence.

Another distinctive feature of the new generation is the adoption of materials alternative to silicon, such as Indium Gallium Zinc Oxide (IGZO). This compound, already used in other areas of electronics, offers favorable characteristics in terms of reducing charge losses, helping to improve data retention even with extremely small-sized cells.

According to rumors, Samsung plans to complete the development of the 10a node by the end of the year, with a possible introduction into mass production in 2028. Subsequent evolutions, referred to as 10b and 10c, are expected to further refine this architecture, while the 10d generation could mark the transition to three-dimensional DRAM solutions, anticipated between 2029 and 2030. Meanwhile, some competitors like Micron seem to prefer a more cautious approach, with the adoption of the 4F structure postponed to focus directly on 3D DRAM technologies.