SSD with Impressive Capacity: Samsung Approaches 1,000 Layer V-NAND Chips

Samsung has taken a new step in the development of high-density NAND memory. The Korean company has indeed created the first prototype of 900-layer V-NAND, a technology that represents one of the most advanced projects in the storage sector and lays the groundwork for the future generation of 1,000-layer expected by 2030.

According to information reported by ETNews, Samsung achieved this milestone thanks to CMB (Cell Multi-Bonding) technology, a solution that allows two stacks of 450 layers to be combined into a single device. The result significantly increases the density of NAND memories, with benefits in capacity for all segments, from servers to smartphones.

Creating a memory with such a high number of layers required solving several technical problems. Among the main obstacles was the phenomenon of wafer warping, which is the deformation of the wafer during production processes. Samsung addressed this issue with a new system called Upper Chuck Design, while alignment errors between layers were corrected using Overlay Correction technologies.

The company's goal remains consistent with what was announced back in 2024: to achieve the production of 1,000-layer V-NAND memories, also through the use of new ferroelectric materials. Meanwhile, intermediate generations of over 400 layers are expected to debut over the coming years.

Competition in the NAND sector remains particularly intense. Currently, SK Hynix maintains a commercial advantage thanks to the development of 321-layer NAND, already available on the market. The company is also working on 400-layer solutions using Hybrid Bonding technology, while Samsung employs a Vertical Bonding approach.

Chinese company YMTC has also increased investments in the storage sector. The company already produces 294-layer and 232-layer NAND and is continuing to expand its production capacity with new dedicated fabs. The market context is favorable due to strong demand related to artificial intelligence, which is increasing the need for high-capacity storage units for data centers and server infrastructures.

Currently, the stacked NAND technology of over 900 layers remains in a prototypical phase, but achieving this milestone confirms the direction taken by memory manufacturers. The vertical increase in layers indeed represents one of the main roads to enhance capacity, density, and efficiency of future SSD units.